t458b_pa infineon technologies ag i. gr. pg. 1/4 preliminary data sheet 07.05.99 this is information on a product that is under development. data and specificatios are subject to change without notice. 17 C 24 ghz gaas power amplifier/driver mmic 4 stage monolithic microwave integrated circuit (mmic) amplifier input/output matched (incl. bond wires) frequency range: 17 ghz to 24 ghz high isolation > 50 db gain > 22 db p -1db > 23 dbm, p sat > 24 dbm chip size: 4.2 mm x 1.8 mm esd: electrical discharge sensitive device, observe handling precautions! description: this 4 stage gaas mmic power amplifier is intended for use in radio link applications. it provides an output power of 23 dbm at 1 db gain compression. the device is fabricated with a 0.18 micron pseudomorphic ingaas/algaas/gaas high electron mobility transistor processing technology. 7\sh 2ughulqj&rgh 3dfndjh chip t458b tbd chip electrical specifications: (v d = 5 C 6 v, i d = 300 ma) parameter min typ max unit frequency range 17 24 ghz p -1db 23 dbm gain 22 db p sat 24 dbm pae 15 % input return loss (incl. bond wire) - 6 db output return loss (incl. bond wire) - 3 db
t458b_pa infineon technologies ag i. gr. pg. 2/4 preliminary data sheet 07.05.99 this is information on a product that is under development. data and specificatios are subject to change without notice. 0hdvxuhggdwd (on chip measurements) $ssolfdwlrq&lufxlw tbd. frequency f (ghz) 12 14 16 18 20 22 24 26 28 30 saturated output power p out (dbm) 18 20 22 24 26 28 30 cch250pw.spw
t458b_pa infineon technologies ag i. gr. pg. 3/4 preliminary data sheet 07.05.99 this is information on a product that is under development. data and specificatios are subject to change without notice. 7hfkqrorj\gdwd chip thickness 95m chip size 4,2 mm * 1,8 mm bond pads 100 m * 100 m bond pad material au (plated gold) chip passivation sin (silicon nitride) 5hfrpphqgdwlrqri%rqglqj&rqglwlrqv 7khuprfrpsuhvvlrq 1dlokhdgzlwkrxw xowudvrqlf :hgjh%rqglqj %rqg3xoo7hvw 0lo!j 7deoh7hps 250c 250c 7rro7hps 180c 150c 6fuxe 100 hz %rqg)rufh 50 g 25 g :luh'ldphwhu 25 m 17 m 1: 2,5 g 2: 3,1 g 3: 3,2 g 4: 3,0 g 5: 2,8 g suggested measurement setup : operating point: 5v < vd < 6v 0v < vg < 0.35v 300ma < id < 350ma c > 100 pf, r = 18 ohms vd vg vd1 vd2 vd3 vd4 rf input rf output vg2 v g 3 vg1 c c c c c c c r r r
t458b_pa infineon technologies ag i. gr. pg. 4/4 preliminary data sheet 07.05.99 this is information on a product that is under development. data and specificatios are subject to change without notice. published by infineon technologies ag i. gr., wireless products division, gaas & sensor subdivision, ws gs pm p, balanstra?e 73, 81541 munich, germany; postal address: p.o. box 800949, 81609 munich, germany. copyright infineon technologies 1999. all rights reserved. as fas as patents or other rights of third parties are concerned, liability is only assumed for components per se, not for applications, processes and cirucits implemented within components or assemblies. the information describes the type of component and shall not be considered as assured characteristics. terms of delivery and rights to change design reserved. for questions on technology, delivery, and prices please contact the offices of infineon in germany or the infineon companies and representatives worldwide. due to technical requirements components may contain dangerous substances. for information on the type in question please contact your nearest infineon office. infineon technologies ag i. gr. is an approved qs9000 and iso9001 manufacturer.
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